SiC Epitaxy Equipment and Process Package--- semiconductor representative project
SiC Epitaxy Equipment and Process Package--- semiconductor representative project
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SiC Epitaxy Equipment and Process Package
Key words
SiC Epitaxy Equipment and Process Package--- semiconductor representative project
The figure is the first generation of epitaxy equipment developed by our team, benchmarking Italian LPE equipment, and the test data of the launched products are basically consistent with the LPE data.
150mm Project Goals
● Thk:10μm; EE: 5mm; 15 points
● Thickness uniformity
-б/mean:<1%
● Doping uniformity
-б/mean:<2.5%
● Cost per wafer
-<100 euros
This is the second generation of epitaxy equipment developed by our team, which is mainly characterized by the optimization of the epitaxy process and the substitution of core components.
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CONTACT INFORMATION
No.86 Donggang 2nd Road, Qujiang District, Quzhou City, Zhejiang Province, China
